DocumentCode
608273
Title
The effect of hydrogen on program disturbance in sub-2ynm Nand flash
Author
Jaewook Yang ; Wonhyo Cha ; Shinwon Seo ; Haesoon Oh ; Jeongseob Oh ; Hyunyoung Shim ; Sekyoung Choi ; Byung-Kook Kim ; Seokwon Cho ; Kiseog Kim ; Kun-Ok Ahn ; Gihyun Bae
Author_Institution
Flash Dev. Div., SK Hynix Inc., Cheongju, South Korea
fYear
2013
fDate
14-18 April 2013
Abstract
The Effect of hydrogen on program disturbance in sub-2ynm NAND flash is studied. It is supposed that boron atoms implanted for field stop are deactivated due to the formation of neutral boron-hydrogen pair. Boron deactivation results in the degradation of STI leakage and program disturbance. By adopting hydrogen reducing process, program disturbance of 2ynm NAND flash is successfully improved.
Keywords
NAND circuits; boron; flash memories; hydrogen; isolation technology; semiconductor doping; B; H; NAND flash memory; STI leakage degradation; hydrogen effect; neutral boron-hydrogen pair; program disturbance; shallow trench isolation; Boron; Couplings; Flash memories; Hydrogen; Leakage currents; Logic gates; Boron deactivation; Hydrogen; STI leakage; program disturbance;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532092
Filename
6532092
Link To Document