• DocumentCode
    608274
  • Title

    Statistical assessment of endurance degradation in high and low resistive states of the HfO2-based RRAM

  • Author

    Deora, S. ; Bersuker, Gennadi ; Sung, M.G. ; Gilmer, D.C. ; Kirsch, P.D. ; Li, H.-F. ; Chong, Harold ; Gausepohl, S.

  • Author_Institution
    SEMATECH, Albany, NY, USA
  • fYear
    2013
  • fDate
    14-18 April 2013
  • Abstract
    This study discusses variability of the high and low resistance states (HRS and LRS, respectively) during the pulse cycling of the cross-bar 1T1R HfO2 based RRAM devices. Read current variation in LRS is found to follow a normal distribution while in the HRS, it is described by the log-normal dependency. It has been identified that the endurance degradation primarily occurs due increasing resistance in LRS caused by the shrinkage of the filament size.
  • Keywords
    hafnium compounds; log normal distribution; random-access storage; HfO2; RRAM; cross-bar; endurance degradation; filament size; high resistive states; log-normal dependency; low resistive states; pulse cycling; read current variation; resistance states; statistical assessment; Current distribution; Degradation; Gaussian distribution; Hafnium compounds; Resistance; Switches; high resistance state (HRS); low resistive states (LRS);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2013 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4799-0112-8
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2013.6532093
  • Filename
    6532093
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=608274