Reliable, low-power super-lattice phase-change memory without melting and write-pulse down slope

Author

Johguchi, Koh ; Egami, T. ; Takeuchi, Ken

Author_Institution

Dept. of Electr., Electron., & Commun. Eng., Chuo Univ., Tokyo, Japan

fYear

2013

fDate

14-18 April 2013

Abstract

A reliable super-lattice phase change memory (SL-PCM) is investigated. Since the conductivity of SLPCM is changed by Ge flip-flop, <; 300 μA write-current is achieved. Additionally, pulse slope is found to be unnecessary, in fact, too long falling edge has negative effects for SET, since SL-PCM does not melt. As a result, due to small write-current, SL-PCM solves the reliability problems about thermal disturb and electro-migration and provides a potential for next-generation non-volatile memories.

Keywords

electromigration; elemental semiconductors; flip-flops; germanium; integrated circuit reliability; phase change memories; Ge; Ge flip-flop; SET; SL-PCM; electromigration; low-power phase-change memory; next-generation nonvolatile memories; pulse slope; reliability; small write-current; super-lattice phase change memory; thermal disturb; Conductivity; Electrical resistance measurement; Phase change materials; Phase change memory; Reliability; Resistance; Temperature measurement; chalcogenide; phase change memory; super-lattice;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6532096

Filename

6532096