DocumentCode
608284
Title
Drain stress influence on read disturb defectivity
Author
De Tomasi, M. ; Vaion, R.E. ; Cola, L. ; Zabberoni, P. ; Mervic, A.
Author_Institution
STMicroelectron. S.r.l., Agrate Brianza, Italy
fYear
2013
fDate
14-18 April 2013
Abstract
Introduction of Error Correction Code (ECC) on new flash memory has changed the dominant failure mode: single defective bits are corrected, intrinsic behavior affects reliability performance. In this paper we focused on the relationship between traps generated by Drain Stress during program operation and soft program induced by continuous reading. Particular focus has been given on new approach to improve reliability performance.
Keywords
error correction codes; flash memories; integrated circuit reliability; ECC; continuous reading; dominant failure mode; drain stress influence; error correction code; flash memory; intrinsic behavior; program operation; read disturb defectivity; reliability performance improvement; soft program; Computer architecture; Error correction codes; Flash memories; Logic gates; Microprocessors; Reliability; Stress; Flash Memories; drain stress; gate stress; read disturb;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532103
Filename
6532103
Link To Document