DocumentCode
608288
Title
Product-Level Reliability Estimator with advanced CMOS technology
Author
Jae-Gyung Ahn ; Ming Feng Lu ; Ping-Ching Yeh ; Chang, Joana ; Xin Wu ; Pai, S.Y.
Author_Institution
Si Technol. Group, Xilinx, Inc., San Jose, CA, USA
fYear
2013
fDate
14-18 April 2013
Abstract
A Product-Level Reliability Estimator (PLRE), which calculates failure rate of a chip as a function of use conditions, has been developed for the first time. Major wafer-level failure mechanisms such as Time-Dependent Dielectric Breakdown (TDDB) and Electro Migration (EM) are included. By applying PLRE to the product with advanced CMOS technology, contributions from each block and each failure mechanism were quantitatively identified. It was shown that, at the target time-to-failure (TTF), gate dielectric (GD) TDDB takes the biggest portion of the failure rate, but the first failure comes with EM.
Keywords
CMOS integrated circuits; electric breakdown; failure analysis; integrated circuit reliability; TDDB; advanced CMOS technology; electro migration; failure rate; gate dielectric; product-level reliability estimator; quantitatively identified; target time-to-failure; time-dependent dielectric breakdown; wafer-level failure mechanisms; Equations; Failure analysis; Human computer interaction; Integrated circuit reliability; Logic gates; Stress; Time Dependent Dielectric Breakdown (TDDB); electro-migration (EM); failure rate; product-level reliability estimator(PLRE); time-to-failure (TTF);
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532107
Filename
6532107
Link To Document