• DocumentCode
    608288
  • Title

    Product-Level Reliability Estimator with advanced CMOS technology

  • Author

    Jae-Gyung Ahn ; Ming Feng Lu ; Ping-Ching Yeh ; Chang, Joana ; Xin Wu ; Pai, S.Y.

  • Author_Institution
    Si Technol. Group, Xilinx, Inc., San Jose, CA, USA
  • fYear
    2013
  • fDate
    14-18 April 2013
  • Abstract
    A Product-Level Reliability Estimator (PLRE), which calculates failure rate of a chip as a function of use conditions, has been developed for the first time. Major wafer-level failure mechanisms such as Time-Dependent Dielectric Breakdown (TDDB) and Electro Migration (EM) are included. By applying PLRE to the product with advanced CMOS technology, contributions from each block and each failure mechanism were quantitatively identified. It was shown that, at the target time-to-failure (TTF), gate dielectric (GD) TDDB takes the biggest portion of the failure rate, but the first failure comes with EM.
  • Keywords
    CMOS integrated circuits; electric breakdown; failure analysis; integrated circuit reliability; TDDB; advanced CMOS technology; electro migration; failure rate; gate dielectric; product-level reliability estimator; quantitatively identified; target time-to-failure; time-dependent dielectric breakdown; wafer-level failure mechanisms; Equations; Failure analysis; Human computer interaction; Integrated circuit reliability; Logic gates; Stress; Time Dependent Dielectric Breakdown (TDDB); electro-migration (EM); failure rate; product-level reliability estimator(PLRE); time-to-failure (TTF);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2013 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4799-0112-8
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2013.6532107
  • Filename
    6532107