Title :
Length and fin number dependence of ionizing radiation-induced degradation in bulk FinFETs
Author :
Chatterjee, I. ; Zhang, E.X. ; Bhuva, B.L. ; Fleetwood, D.M. ; Fang, Y.-P. ; Oates, A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Ultra-small bulk FinFETs (dual-well and triple-well) from a commercial process have been exposed to total ionizing dose. The devices have varying numbers of fins and channel length. The devices show a significant increase in off-state leakage current, threshold voltage shift, transconductance and subthreshold slope degradation after irradiation to 300 krad(SiO2). The results also show a strong dependence of fin-to-fin variation and trapped charge in the STI on the radiation response of the devices.
Keywords :
IV-VI semiconductors; MOSFET; silicon compounds; SiO2; bulk FinFET; fin number dependence; ionizing radiation-induced degradation; off-state leakage current; radiation response; Annealing; FinFETs; Leakage currents; Logic gates; Radiation effects; Threshold voltage; FinFET; Room-temperature Anneal; Subthreshold Swing; Threshold Voltage Shift; Total Ionizing Dose; Transconductance Degradation;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532115
