• DocumentCode
    608296
  • Title

    Length and fin number dependence of ionizing radiation-induced degradation in bulk FinFETs

  • Author

    Chatterjee, I. ; Zhang, E.X. ; Bhuva, B.L. ; Fleetwood, D.M. ; Fang, Y.-P. ; Oates, A.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
  • fYear
    2013
  • fDate
    14-18 April 2013
  • Abstract
    Ultra-small bulk FinFETs (dual-well and triple-well) from a commercial process have been exposed to total ionizing dose. The devices have varying numbers of fins and channel length. The devices show a significant increase in off-state leakage current, threshold voltage shift, transconductance and subthreshold slope degradation after irradiation to 300 krad(SiO2). The results also show a strong dependence of fin-to-fin variation and trapped charge in the STI on the radiation response of the devices.
  • Keywords
    IV-VI semiconductors; MOSFET; silicon compounds; SiO2; bulk FinFET; fin number dependence; ionizing radiation-induced degradation; off-state leakage current; radiation response; Annealing; FinFETs; Leakage currents; Logic gates; Radiation effects; Threshold voltage; FinFET; Room-temperature Anneal; Subthreshold Swing; Threshold Voltage Shift; Total Ionizing Dose; Transconductance Degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2013 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4799-0112-8
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2013.6532115
  • Filename
    6532115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=608296