New Hot Carrier degradation modeling reconsidering the role of EES in ultra short N-channel MOSFETs

Hot Carrier induced degradation is modeled using the carrier energy distribution function including Carrier-Carrier Scattering process. Silicon-hydrogen bond breaking through single particle and multiple particles interactions is considered in the modeling of the microscopic defect creation along the channel length. The model is applied to short channel devices and confronted to Monte Carlo simulations including Electron Electrons Scattering, showing a small contribution of EES over the whole damage, mainly dominated by multiple carrier interactions.