Title :
A comprehensive AC / DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence
Author :
Desai, Shaishav ; Mukhopadhyay, Saibal ; Goel, Nishith ; Nanaware, N. ; Jose, B. ; Joshi, Kishor ; Mahapatra, Santanu
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India
Abstract :
A comprehensive NBTI framework using the H/H2 RD model for interface traps and 2 well model for hole traps has been proposed and used to predict DC and AC experiments. The framework is validated against experimental data from different DC stress and recovery conditions, AC frequency and duty cycle, measurement speed, and across SiON and HKMG devices having different gate insulator processes. Limitations of the alternative 2 stage model framework is discussed.
Keywords :
hole traps; interface states; negative bias temperature instability; power MOSFET; semiconductor device models; AC frequency; DC stress; H/H2 RD model; HKMG device; SiON; comprehensive AC/DC NBTI model; duty cycle; gate insulator process; hole trap; interface trap; measurement speed; process dependence; recovery condition; Charge carrier processes; Correlation; Data models; Logic gates; Mathematical model; Predictive models; Stress; 2 stage model; AC duty cycle; AC frequency; DC stress; NBTI; NBTI process dependence; RD model; Two Energy Well model; recovery; trap generation; trapping;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532117
