Multi-region DCIV spectroscopy and impacts on the design of STI-based LDMOSFETs

Author

Yandong He ; Ganggang Zhang ; Lin Han ; Xing Zhang

Author_Institution

Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China

fYear

2013

fDate

14-18 April 2013

Abstract

A probing technique, multi-region DCIV spectroscopy, has been investigated systematically. This non-destructive method demonstrated the attractive capability on profiling the interface states overall in STI-based LDMOSFETs. The sensitivity on the interface state generation at channel and accumulation region was superior to the conventional Id-Vg method. Based on the device characterization and stress tests, the dependence of spectroscopic features on channel, accumulation and poly overlap length was investigated and verified. The optimum device design to suppress device degradation was proposed.

Keywords

MOSFET; semiconductor device testing; spectra; Id-Vg method; STI-based LDMOSFET design; accumulation region; channel region; device degradation suppression; direct-current current-voltage; interface state generation sensitivity; interface state profiling; multiregion DCIV spectroscopy; nondestructive method; polyoverlap length; probing technique; stress testing; Current measurement; Degradation; Interface states; Logic gates; Spectroscopy; Stress; Substrates; STI-based LDMOSFET; multi-region DCIV spectroscopy; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6532118

Filename

6532118