DocumentCode :
608683
Title :
High speed waveguide-integrated Ge/Si avalanche photodetector
Author :
Ning Duan ; Tsung-Yang Liow ; Lim, A.E. ; Liang Ding ; Guo Qiang Lo
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear :
2013
fDate :
17-21 March 2013
Firstpage :
1
Lastpage :
3
Abstract :
We report waveguide Ge/Si avalanche photodiodes with a high 3-dB bandwidth of ~20 GHz and a high responsivity of 22 A/W. Such device can be monolithically integrated with other silicon photonic components on SOI substrates.
Keywords :
Ge-Si alloys; avalanche photodiodes; photodetectors; silicon-on-insulator; Ge-Si; SOI substrates; bandwidth 20 GHz; high speed waveguide-integrated avalanche photodetector; silicon photonic components; waveguide avalanche photodiodes; Avalanche photodiodes; Bandwidth; Electric fields; Optical waveguides; Sensitivity; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC), 2013
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0457-0
Type :
conf
Filename :
6532823
Link To Document :
بازگشت