Title :
First monolithic GaAs IQ electro-optic modulator, demonstrated at 150 Gbit/s with 64-QAM
Author :
Korn, D. ; Schindler, Philipp C. ; Stamatiadis, Christos ; O´Keefe, M.F. ; Stampoulidis, L. ; Schmogrow, R. ; Zakynthinos, P. ; Palmer, R. ; Cameron, N. ; Zhou, Yangzhong ; Walker, R.G. ; Kehayas, Efstratios ; Tomkos, Ioannis ; Zimmermann, L. ; Petermann,
Author_Institution :
Inst. IPQ & IMT, Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany
Abstract :
We report on the first experimental demonstration of a GaAs IQ-modulator. Data rates of up to 150 Gbit/s are generated using QPSK, 16-QAM, 32-QAM and 64-QAM on a single carrier and polarization.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; quadrature amplitude modulation; quadrature phase shift keying; 16-QAM; 32-QAM; 64-QAM; GaAs; QPSK; bit rate 150 Gbit/s; monolithic GaAs IQ electro-optic modulator; quadrature amplitude modulation; quadrature phase-shift keying; Gallium arsenide; High-speed optical techniques; Optical fiber amplifiers; Optical modulation; Phase shift keying; Photonics;
Conference_Titel :
Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC), 2013
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0457-0
