DocumentCode
60914
Title
Experimental Reliability Improvement of Power Devices Operated Under Fast Thermal Cycling
Author
Simon, Dan ; Boianceanu, Cristian ; De Mey, Gilbert ; Topa, Vasile
Author_Institution
Infineon Technol. Romania, Bucharest, Romania
Volume
36
Issue
7
fYear
2015
fDate
Jul-15
Firstpage
696
Lastpage
698
Abstract
In automotive applications, the lifetime of the power transistors is limited by the number of power pulses, induced by, e.g., short-circuit or inductive clamping events. This letter presents a solution for reliability improvement of double-diffused metal-oxide-semiconductor transistors which operate under thermomechanical stresses generated during power cycling.
Keywords
MOSFET; power semiconductor devices; semiconductor device reliability; double-diffused metal-oxide-semiconductor transistors; fast thermal cycling; power cycling; power devices; reliability improvement; thermomechanical stresses; Metallization; Reliability; Stress; Switches; Temperature distribution; Transistors; DMOS metallization; Reliability; fast thermal cycling; repetitive pulse SOA; stress migration;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2015.2432128
Filename
7105860
Link To Document