DocumentCode :
609492
Title :
BAW pressure sensor on LiNbO3 membrane lapping
Author :
Baron, T. ; Masson, Jean-Francois ; Romand, J.P. ; Alzuaga, Sebastien ; Catherinot, L. ; Chatras, Matthieu ; Ballandras, S.
Author_Institution :
FEMTO-ST, ENSMM, Besancon, France
fYear :
2010
fDate :
13-16 April 2010
Firstpage :
1
Lastpage :
8
Abstract :
In this paper, we have proposed a new concept for pressure and more generally stress sensors exploiting single-crystal based HBAR. After describing the operation principle, the practical feasibility of the sensor has been shown, yielding electrical results allowing a first characterization of such sensor sensitivity. The process flow is generic and allows us to develop different devices such as HBAR or SAW sensors with the freedom of choosing material in function of the design requirements. Although the first reported results can not exploit the high quality resonance of such HBARs, more effort will be performed in the next future to definitely validate the approach and the corresponding stress sensitivity.
Keywords :
acoustic resonators; bulk acoustic wave devices; lapping (machining); lithium compounds; pressure sensors; BAW pressure sensor; LiNbO3; high quality resonance; membrane lapping; single crystal based HBAR; stress sensitivity; stress sensor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
EFTF-2010 24th European Frequency and Time Forum
Conference_Location :
Noordwijk
Print_ISBN :
978-1-4673-5970-2
Type :
conf
DOI :
10.1109/EFTF.2010.6533644
Filename :
6533644
Link To Document :
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