• DocumentCode
    609666
  • Title

    A successive approximation ADC with resistor-capacitor hybrid structure

  • Author

    Ting-Zi Chen ; Soon-Jyh Chang ; Guan-Ying Huang

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • fYear
    2013
  • fDate
    22-24 April 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a 10-bit 50MS/s successive approximation register (SAR) ADC with low input capacitance that uses an on-chip resistive ladder to arrange a new switching scheme. The proposed arrangement not only reduces the total input capacitance, but also performs the predictive capacitor switching sequence to further reduce the power consumption. Therefore, the proposed SAR ADC has the features of small area and low power consumption. Compared to conventional SAR ADCs, the proposed ADC reduces the input capacitance to 512 fF for 10-bit resolution. This work is fabricated in TSMC 90-nm 1P9M CMOS process. This prototype chip consumes 0.703 mW from a 1.2-V supply and the ENOB is 9.3 bits at 50 MS/s sampling rate. The resultant FoM is 28 fJ/conversion-step.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; capacitor switching; ladder networks; resistors; ADC; ENOB; SAR; TSMC 1P9M CMOS process; capacitance 512 fF; on-chip resistive ladder; power 0.703 mW; power consumption; predictive capacitor switching sequence; resistor-capacitor hybrid structure; resultant FoM; size 90 nm; successive approximation register; total input capacitance reduction; voltage 1.2 V; word length 10 bit; word length 9.3 bit; Approximation methods; Architecture; Bridge circuits; Capacitance; Capacitors; Power demand; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4673-4435-7
  • Type

    conf

  • DOI
    10.1109/VLDI-DAT.2013.6533842
  • Filename
    6533842