A process-scalable RF transmitter using 90nm and 65nm Si CMOS

Author

Shirane, A. ; Ito, H. ; Ishihara, Noboru ; Masu, Kazuya

Author_Institution

Solutions Sci. Res. Lab. (SSRL), Tokyo Inst. of Technol., Yokohama, Japan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

4

Abstract

This paper describes a process-scalable transmitter based on inverter topology excluding un-scalable RF inductors. The proposed transmitter was fabricated by using 90nm and 65nm Si CMOS process. The following results are obtained from the comparison between 90nm and 65nm of the measurement results. The area of the core circuits reduces from 0.0081mm² to 0.0054mm². The operational frequency improves from 6.0 GHz to 11GHz, and the power consumption decreases from 10.6 mW to 7.0 mW. These results confirm the process-scalability of the presented transmitter, and promise the further improvements with the future miniaturization.

Keywords

CMOS integrated circuits; elemental semiconductors; integrated circuit measurement; invertors; microwave integrated circuits; power integrated circuits; radio transmitters; silicon; CMOS process; Si; frequency 6.0 GHz to 11 GHz; inverter topology; power 10.6 mW to 7.0 mW; power consumption; process-scalable RF transmitter; size 65 nm; size 90 nm; unscalable RF inductor; Frequency measurement; Power demand; Power generation; Power measurement; Transmitters; Voltage measurement; CMOS integrated circuit; inductor-less; inverter-based; radiofrequency integrated circuits; scalable; transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation, and Test (VLSI-DAT), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-4435-7

Type

conf

DOI

10.1109/VLDI-DAT.2013.6533878

Filename

6533878