DocumentCode
609759
Title
TSV plating using copper methanesulfonate electrolyte with single component suppressor
Author
Wu, H.L.Henry ; Lee, S.W.Ricky
Author_Institution
Department of Mechanical Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong
fYear
2012
fDate
17-20 Sept. 2012
Firstpage
1
Lastpage
5
Abstract
This paper presents copper filling of TSV using an acidic cupric methanesulfonate electroplating electrolyte containing chloride and a poloxamine suppressor. The process was accomplished utilizing a single component suppressor system. Such a plating system might simplify the additive replenishment procedure during the TSV filling. The influence of the poloxamine on the copper deposition was also investigated. The poloxamine greatly inhibited the copper electrodeposition on a platinum rotating electrode and might function as an effective suppressor. Compared with the conventional suppressor PEG, poloxamine had a larger time constant and smaller diffusion constant.
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic System-Integration Technology Conference (ESTC), 2012 4th
Conference_Location
Amsterdam, Netherlands
Print_ISBN
978-1-4673-4645-0
Type
conf
DOI
10.1109/ESTC.2012.6542053
Filename
6542053
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