• DocumentCode
    609759
  • Title

    TSV plating using copper methanesulfonate electrolyte with single component suppressor

  • Author

    Wu, H.L.Henry ; Lee, S.W.Ricky

  • Author_Institution
    Department of Mechanical Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong
  • fYear
    2012
  • fDate
    17-20 Sept. 2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper presents copper filling of TSV using an acidic cupric methanesulfonate electroplating electrolyte containing chloride and a poloxamine suppressor. The process was accomplished utilizing a single component suppressor system. Such a plating system might simplify the additive replenishment procedure during the TSV filling. The influence of the poloxamine on the copper deposition was also investigated. The poloxamine greatly inhibited the copper electrodeposition on a platinum rotating electrode and might function as an effective suppressor. Compared with the conventional suppressor PEG, poloxamine had a larger time constant and smaller diffusion constant.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic System-Integration Technology Conference (ESTC), 2012 4th
  • Conference_Location
    Amsterdam, Netherlands
  • Print_ISBN
    978-1-4673-4645-0
  • Type

    conf

  • DOI
    10.1109/ESTC.2012.6542053
  • Filename
    6542053