Analytical Models for Electric Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors

Author

Guangxi Hu ; Ping Xiang ; Zhihao Ding ; Ran Liu ; Lingli Wang ; Ting-Ao Tang

Author_Institution

State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China

Volume

61

Issue

3

fYear

2014

fDate

Mar-14

Firstpage

688

Lastpage

695

Abstract

Analytical models for electric potential, threshold voltage, and subthreshold swing of the junctionless surrounding-gate field-effect transistors are presented. Poisson equation is solved and the electric potential is obtained. With the potential model, explicit expressions for threshold voltage and subthreshold swing are obtained. The analytical results are compared with those from simulations and excellent agreements are observed. The analytical models are useful not only for fast circuit simulations, but also for device design and optimization.

Keywords

Poisson equation; electric potential; field effect transistors; semiconductor device models; Poisson equation; analytical models; device design; electric potential; explicit expressions; fast circuit simulations; junctionless surrounding-gate field-effect transistors; subthreshold swing; threshold voltage; Analytical models; Electric potential; Logic gates; MOSFET; Simulation; Threshold voltage; Analytical model; junctionless (JL) field-effect transistor (FET); modeling and simulation; surrounding gate (SG);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2297378

Filename

6712193