Analytical Models for Electric Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors

Analytical models for electric potential, threshold voltage, and subthreshold swing of the junctionless surrounding-gate field-effect transistors are presented. Poisson equation is solved and the electric potential is obtained. With the potential model, explicit expressions for threshold voltage and subthreshold swing are obtained. The analytical results are compared with those from simulations and excellent agreements are observed. The analytical models are useful not only for fast circuit simulations, but also for device design and optimization.