PECVD of GexS1−x films for nano-ionic redox conductive bridge memristive switch memory

Author

Latif, Muhammad Rizwan ; Mitkova, M. ; Tompa, G. ; Coleman, E.

Author_Institution

Dept. of Electr. & Comput. Eng., Boise State Univ., Boise, ID, USA

fYear

2013

fDate

12-12 April 2013

Firstpage

1

Lastpage

4

Abstract

This study is related to fabrication and characterization of redox conductive bridge memristors (RCBM). An active region in RCBM is formed by chalcogenide glass (ChG) doped with silver (Ag). We report the application of plasma enhanced chemical vapor deposition (PECVD) method for depositing ChG films which gives the advantage of flexibility in the composition and structure not easily achieved with sputtering or thermal evaporation. The growth kinetics of the deposition process, as well as the properties of the films is investigated. Optimal deposition conditions for reliable device performance are determined. The electrical characteristics of the devices fabricated at these conditions are also tested.

Keywords

Ge-Si alloys; chemical vapour deposition; memristors; random-access storage; silver; sprockets; sputtering; Ag; ChG film deposition; Ge_xS_1-x; PECVD; RCBM; chalcogenide glass; deposition process; electrical characteristics; growth kinetics; nanoionic redox conductive bridge memristive switch memory; optimal deposition condition; plasma enhanced chemical vapor deposition; redox conductive bridge memristor; silver; sputtering; thermal evaporation; Bridge circuits; Electrodes; Films; Glass; Performance evaluation; Surface treatment; Redox conductive bridge memristors; chalcogenide glass; film and device characterization; silver; solid electrolyte;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices (WMED), 2013 IEEE Workshop on

Conference_Location

Boise, ID

ISSN

1947-3834

Print_ISBN

978-1-4673-6034-0

Type

conf

DOI

10.1109/WMED.2013.6544504

Filename

6544504