Title :
Three-dimensional FinFET simulation using the FDTD method
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Idaho, Moscow, ID, USA
Abstract :
A three-dimensional simulation using the finite-difference time-domain (FDTD) method is being used to determine transmission through FinFETs. A waveform representing a particle is analyzed before and after it goes through the channel using a three-dimensional spatial sine transform to produce functions of energy. The ratio of these two functions is used to calculate transmission. From the transmission, the quantum conductance of the channel can be calculated.
Keywords :
MOSFET; finite difference time-domain analysis; 3D FinFET simulation; 3D spatial sine transform; FDTD method; finite difference time domain; quantum conductance; waveform; Electric potential; Equations; FinFETs; Finite difference methods; Mathematical model; Time-domain analysis; Transforms; FDTD method; FinFET; quantum conductance; transmission;
Conference_Titel :
Microelectronics and Electron Devices (WMED), 2013 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4673-6034-0
DOI :
10.1109/WMED.2013.6544507
