DocumentCode
610289
Title
Three-dimensional FinFET simulation using the FDTD method
Author
Sullivan, D.M.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Idaho, Moscow, ID, USA
fYear
2013
fDate
12-12 April 2013
Firstpage
13
Lastpage
16
Abstract
A three-dimensional simulation using the finite-difference time-domain (FDTD) method is being used to determine transmission through FinFETs. A waveform representing a particle is analyzed before and after it goes through the channel using a three-dimensional spatial sine transform to produce functions of energy. The ratio of these two functions is used to calculate transmission. From the transmission, the quantum conductance of the channel can be calculated.
Keywords
MOSFET; finite difference time-domain analysis; 3D FinFET simulation; 3D spatial sine transform; FDTD method; finite difference time domain; quantum conductance; waveform; Electric potential; Equations; FinFETs; Finite difference methods; Mathematical model; Time-domain analysis; Transforms; FDTD method; FinFET; quantum conductance; transmission;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and Electron Devices (WMED), 2013 IEEE Workshop on
Conference_Location
Boise, ID
ISSN
1947-3834
Print_ISBN
978-1-4673-6034-0
Type
conf
DOI
10.1109/WMED.2013.6544507
Filename
6544507
Link To Document