Title :
Improved resistive switching memory performance using novel W/TaOx/TiOxN/TiN structure
Author :
Prakash, Aravind ; Maikap, S. ; Chen, W.S. ; Lee, H.Y. ; Chen, F.T. ; Kao, M.-J. ; Tsai, M.-J.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ. (CGU), Taoyuan, Taiwan
Abstract :
Improved resistive switching memory characteristics in a novel W/TaOx/TiOxN/TiN device with a small current compliance of 50 μA have been investigated. Memory device has shown consecutive repeatable resistive switching cycles (>102) with small operation voltage of ±1.5V. The device with TaOx/TiOxN shows improved resistance ratio of ~40 as compared to TiOxN device (~7). The switching mechanism is attributed to the formation/dissolution of Oxygen vacancy filament. The memory device has shown good read endurance of >7.5×105 cycles and excellent data retention of >5 hours at 85°C.
Keywords :
CMOS memory circuits; electric resistance; random-access storage; tantalum compounds; titanium compounds; tungsten compounds; CMOS; W-TaOx-TiOxN-TiN; current 50 muA; current compliance; data retention; memory device; oxygen vacancy filament; read endurance; repeatable resistive switching cycle; resistance ratio; resistive switching memory characteristics; resistive switching memory performance; switching mechanism; temperature 85 C; Educational institutions; Electrodes; Films; Nonvolatile memory; Resistance; Switches; Tin;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
DOI :
10.1109/VLSI-TSA.2013.6545583
