• DocumentCode
    610573
  • Title

    Improvement of switching uniformity and scalability in 1T-1R HfOx-based bipolar resistive memory with Zr inserting layer

  • Author

    Wu, T.Y. ; Chen, W.S. ; Chen, Y.S. ; Chen, Patrick S. ; Lee, H.Y. ; Tsai, K.H. ; Tsai, C.H. ; Gu, P.Y. ; Rahaman, S.Z. ; Lin, Y.T. ; Chen, F.T. ; Tsai, M.J. ; Ku, T.K.

  • Author_Institution
    Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    22-24 April 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    1T-1R Zr/HfOx RRAM with improved uniformity is proposed, which is due to the easily Oxidation of Zr layer from both HfOx and supporting SiO2. The formation of ZrOx become a good current limiter which help the device prevent scalability issue.
  • Keywords
    hafnium compounds; oxidation; random-access storage; zirconium; 1T-1R Zr/HfOx RRAM; HfOx; Zr; Zr inserting layer; bipolar resistive memory; current limiter; oxidation; switching uniformity; Electrodes; Hafnium oxide; Oxidation; Resistance; Switches; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4673-3081-7
  • Electronic_ISBN
    978-1-4673-6422-5
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2013.6545587
  • Filename
    6545587
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=610573