DocumentCode :
610589
Title :
EUV degradation of high performance Ge MOSFETs
Author :
Chen, Y.-T. ; Chang, Hsie-Chia ; Wong, I.-S. ; Lin, Chih-Ming ; Sun, H.-C. ; Ciou, H.-J. ; Yeh, W.-T. ; Lo, S.-J. ; Liu, C.W. ; Chenming Hu ; Fu-Liang Yang
Author_Institution :
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2013
fDate :
22-24 April 2013
Firstpage :
1
Lastpage :
2
Abstract :
High energy 13.5 nm EUV (~92 eV) induced Ge MOSFET degradation is reportedly for the first time. The degradation of threshold voltage, subthreshold swing, and channel mobility is attributed to the generation of interface traps and oxide fixed charges. Much more severe degradation of S.S. on nFETs as compared to pFETs suggests that acceptor type Dit in the upper half of Ge bandgap are generated by EUV radiation. ΔQit may originate from the dangling bonds at interface. Positive ΔQf is due to the fixed charges of oxygen vacancy. The generation of bulk defects in Ge increases the drain leakage current, leading to the reduction of current on/off ratio.
Keywords :
MOSFET; germanium; leakage currents; ultraviolet lithography; EUV degradation; EUV radiation; Ge; Ge MOSFET degradation; Ge bandgap; bulk defect; channel mobility; drain leakage current; interface trap; nFET; oxygen vacancy; pFET; subthreshold swing; threshold voltage; wavelength 13.5 nm; Degradation; Junctions; Leakage currents; Logic gates; MOSFET; Photonic band gap; Radiation effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4673-3081-7
Electronic_ISBN :
978-1-4673-6422-5
Type :
conf
DOI :
10.1109/VLSI-TSA.2013.6545603
Filename :
6545603
Link To Document :
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