Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

Author

Shuyun Zhao ; Zhiguo Meng ; Wei Zhou ; Ho, Jason ; Man Wong ; Hoi-Sing Kwok

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

60

Issue

6

fYear

2013

fDate

Jun-13

Firstpage

1965

Lastpage

1970

Abstract

We introduce a new structure for low-temperature polycrystalline silicon thin-film transistors (TFTs). This bridged-grain structure can reduce the threshold voltage and the subthreshold swing, increase the on-off ratio, and suppress leakage current and kink effect of TFTs significantly. This technique can be applied to all polycrystalline silicon TFTs, including those made by solid-phase crystallization, metal-induced crystallization, metal-induced lateral crystallization, and excimer laser annealing.

Keywords

crystallisation; laser beam annealing; thin film transistors; bridged-grain polycrystalline silicon thin-film transistor; bridged-grain structure; excimer laser annealing; leakage current suppression; metal-induced crystallization; metal-induced lateral crystallization; solid-phase crystallization; subthreshold swing reduction; threshold voltage reduction; Kink effect; low-temperature polycrystalline silicon (LTPS); short-channel effect; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2258925

Filename

6516085