• DocumentCode
    614367
  • Title

    A simple drain current model for carbon nanotube field effect transistors

  • Author

    Marki, Rebiha ; Azizi, Cherifa ; Zaabat, Mourad

  • fYear
    2013
  • fDate
    27-30 April 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. Carbon nanotube field effect transistor (CNTFET) is found to be one of the most promising alternatives for bulk Si MOSFET. In this work we have simulated a cylindrical CNTFET. Based on the simulation results both output and transfer characteristic curves are plotted and analyzed. We have also studied the effect of different parameters .
  • Keywords
    carbon nanotube field effect transistors; semiconductor device models; C; CNTFET; carbon nanotube field effect transistors; drain current model; output characteristic curve; transfer characteristic curve; CNTFETs; Carbon nanotubes; Electric potential; Electron tubes; MOSFET; Nanoscale devices; CNTFET; Static properties; nanotube diameter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International
  • Conference_Location
    Fira
  • Print_ISBN
    978-1-4673-6196-5
  • Electronic_ISBN
    978-1-4673-6194-1
  • Type

    conf

  • DOI
    10.1109/SIECPC.2013.6550986
  • Filename
    6550986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=614367