Absorption and single-pass gain measurements in bilayer quantum dot laser structure

Author

Majid, Mazlina A. ; Childs, D.T.D. ; Kennedy, Krista ; Airey, R. ; Hogg, R.A. ; Clarke, Edmund ; Spencer, Peter ; Murray, R.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK

fYear

2013

fDate

27-30 April 2013

Firstpage

1

Lastpage

3

Abstract

In this paper we report on the absorption and single-pass gain analysis of molecular beam epitaxy (MBE) grown bilayer quantum dot (QD) laser material using multisection method. The measurement allowed us to exclude unguided spontaneous emission and measure the internal optical loss accurately.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser variables measurement; molecular beam epitaxial growth; optical loss measurement; optical losses; quantum dot lasers; InAs-GaAs; MBE; absorption measurement; bilayer quantum dot; bilayer quantum dot laser structure; internal optical loss; laser material; molecular beam epitaxy; multisection method; single-pass gain measurement; Absorption; Gain measurement; Gallium arsenide; Measurement by laser beam; Optical variables measurement; Quantum dot lasers; Temperature measurement; Molecular beam epitaxy; gain and absorption; multi-section; quantum dots (QDs);

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International

Conference_Location

Fira

Print_ISBN

978-1-4673-6196-5

Electronic_ISBN

978-1-4673-6194-1

Type

conf

DOI

10.1109/SIECPC.2013.6550989

Filename

6550989