DocumentCode
614429
Title
Thermal resistance of power submicron heterojunction field-effect transistors
Author
Timofeyev, Vladimir ; Semenovskaya, Elena
Author_Institution
Dept. of Phys. & Biomed. Electron., Nat. Tech. Univ. of Ukraine KPI, Kiev, Ukraine
fYear
2013
fDate
16-19 April 2013
Firstpage
47
Lastpage
50
Abstract
The paper presents a method for thermal resistance calculating of power submicron heterojunction field-effect transistor. Described method establishes dependence of the thermal resistance of the transistor on its thermo- and electrophysical parameters, geometrical size and shape. The results of thermal resistance calculation for submicron transistors are proved by experiment and show good agreement.
Keywords
geometry; power field effect transistors; thermal resistance; electrophysical parameter; geometrical shape; geometrical size; power submicron heterojunction field-effect transistor; thermal resistance calculation; thermophysical parameter; Field effect transistors; Heating; Logic gates; Substrates; Thermal resistance; power submicron heterojunction field-effect transistor; thermal model; thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference
Conference_Location
Kiev
Print_ISBN
978-1-4673-4669-6
Type
conf
DOI
10.1109/ELNANO.2013.6552007
Filename
6552007
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