Ge/GaAs thin films for thermometer and bolometer application

Author

Mitin, V.F. ; Lytvyn, P.M. ; Kholevchuk, V.V. ; Mitin, V.V. ; Venger, E.F. ; Mironov, O.A.

Author_Institution

Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine

fYear

2013

fDate

16-19 April 2013

Firstpage

56

Lastpage

60

Abstract

We demonstrate that the heavily doped and completely compensated Ge thin films on semi-insulating GaAs substrates are very promising for bolometer and thermoresistor application in the 250 K to 500 K temperature range. These films have single crystal structure, the pronounced nano-relief surface and compositional nano-inhomogeneities. The conductivity of such films is two-dimensional percolation of charge carriers through a fluctuating electrostatic potential.

Keywords

III-V semiconductors; bolometers; electric potential; elemental semiconductors; gallium arsenide; germanium; heavily doped semiconductors; semiconductor thin films; thermistors; thermometers; Ge-GaAs; bolometer application; charge carriers; compositional nanoinhomogeneities; electrostatic potential fluctuation; nanorelief surface; semi insulating substrate; single-crystal structure; temperature 250 K to 500 K; thermometer; thermoresistor application; thin film; two-dimensional percolation; Charge carriers; Conductivity; Electric potential; Films; Gallium arsenide; Surface morphology; Surface treatment; Ge/GaAs; bolometers; heavily doped and strongly compensated semiconductors; percolation; thermometers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference

Conference_Location

Kiev

Print_ISBN

978-1-4673-4669-6

Type

conf

DOI

10.1109/ELNANO.2013.6552037

Filename

6552037