Two-channel heterotransistors with quantum dots systems

Author

Timofeyev, Vladimir ; Faleyeva, Elena

Author_Institution

Phys. & Biomed. Electron. Lab., Nat. Tech. Univ. of Ukraine Kyiv Polytech. Inst., Kiev, Ukraine

fYear

2013

fDate

16-19 April 2013

Firstpage

172

Lastpage

176

Abstract

Two-channel field-effect heterotransistor characteristics with embedded systems of quantum dots (QDs) are presented. A physical interpretation of processes and analysis of field-velocity dependences in these structures is given. The interaction mechanism of QDs in quantum well with two-dimensional electron gas in high electric fields related to the polar optical phonon influence and charge carriers´ emission from QDs is described.

Keywords

embedded systems; high electron mobility transistors; phonons; semiconductor quantum dots; semiconductor quantum wells; two-dimensional electron gas; charge carriers emission; embedded systems; field-effect heterotransistor characteristics; field-velocity dependences; high electric fields; interaction mechanism; physical interpretation; polar optical phonon influence; quantum dots systems; quantum well; two-channel heterotransistors; two-dimensional electron gas; Biomedical optical imaging; Electron mobility; Equations; Mathematical model; Optical scattering; Phonons; Quantum dots; field-effect heterotransistor; polar optical phonons; quantum dot; quantum well; size quantization; two-channel heterotransistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference

Conference_Location

Kiev

Print_ISBN

978-1-4673-4669-6

Type

conf

DOI

10.1109/ELNANO.2013.6552057

Filename

6552057