• DocumentCode
    614490
  • Title

    The ways of silicon carbide usage in field-emission devices: The technological aspect

  • Author

    Shelepin, N. ; Matyushkin, I. ; Orlov, S. ; Ermakov, A. ; Svechkarev, K. ; Bobovnikov, P. ; Mikhaylov, A. ; Belov, Anton

  • Author_Institution
    Lab. of Perspective Technol., JSC Mol. Electron. Res. Inst., Moscow, Russia
  • fYear
    2013
  • fDate
    16-19 April 2013
  • Firstpage
    177
  • Lastpage
    180
  • Abstract
    In general cold field emission of SiC and other cathodes are compared. Possible applications of SiC for field emission cathodes and some of technological methods are considered. Also our results on the CVD-manufactured P-doped SiC-films are presented. Lastly our results on the ion-synthesized SiC-nanoinclusions in the silicon surface layer are discussed.
  • Keywords
    cathodes; chemical vapour deposition; elemental semiconductors; silicon; wide band gap semiconductors; CVD; SiC; chemical vapour deposition; field emission cathodes; field-emission devices; Annealing; Carbon dioxide; Cathodes; Films; Silicon; Silicon carbide; CVD; SiC; carbon; field emission; ion implantation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference
  • Conference_Location
    Kiev
  • Print_ISBN
    978-1-4673-4669-6
  • Type

    conf

  • DOI
    10.1109/ELNANO.2013.6552068
  • Filename
    6552068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=614490