Microwave characterization of dielectric substrates for thin films deposition

A new electrode-free method is proposed for microwave characterization of low-loss single crystal and ceramic dielectric substrates used for thin films deposition. The substrate is considered and characterized as a thin dielectric resonator. Both TE_01δ and HE_11δ resonance modes were activated in the substrates with a dielectric permittivity above 10. The in-plane averaged dielectric permittivity and losses of a number of substrates were measured in a broad temperature range using the TE_01δ mode. The HE_11δ modes are proposed for the in-plane dielectric anisotropy characterization. In-plane components of anisotropic dielectric parameters of the (110) DyScO₃ substrate were measured.