• DocumentCode
    61469
  • Title

    High-Speed Imaging/Mapping Spectroscopic Ellipsometry for In-Line Analysis of Roll-to-Roll Thin-Film Photovoltaics

  • Author

    Shan, Ambalanath ; Fried, Miklos ; Juhasz, Gyorgy ; Major, Csaba ; Polgar, Oliver ; Nemeth, A. ; Petrik, Peter ; Dahal, L.R. ; Jie Chen ; Zhiquan Huang ; Podraza, Nikolas J. ; Collins, Robert W.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA
  • Volume
    4
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    355
  • Lastpage
    361
  • Abstract
    An expanded-beam spectroscopic ellipsometer has been developed and applied toward in situ high-speed imaging/mapping analysis of large area spatial uniformity for multilayer coated substrates in roll-to-roll thin-film photovoltaics (PV). Slower speed instrumentation available in such analyses applies a 1-D detector array for spectroscopic mapping and involves width-wise translation of the ellipsometer optics over the moving coated substrate surface, measuring point-by-point in a time-consuming process. The expanded-beam instrument employs instead a 2-D detector array with no moving optics, exploiting one array index for spectroscopy and the second array index for line imaging across the width of a large area sample. Thus, the instrument enables imaging width-wise and mapping length-wise for uniformity evaluation at the high linear substrate speeds required for real-time, in situ, and online analysis in roll-to-roll thin-film PV. In this investigation, we employ the expanded beam technique to characterize the uniformity of the Ag, ZnO, and n-type hydrogenated amorphous silicon (a-Si:H) layers of an a-Si:H n-i-p structure deposited on a flexible polyimide substrate in the roll-to-roll configuration. Spectroscopic ellipsometry data across a line image were collected as the substrate was translated by a roll-to-roll mechanism. Coated areas as large as 12 cm × 45 cm were analyzed in this study for layer thickness and optical properties by applying the appropriate analytical models for the complex dielectric functions of the Ag, ZnO, and n-type a-Si:H layers.
  • Keywords
    II-VI semiconductors; amorphous semiconductors; dielectric function; elemental semiconductors; ellipsometry; hydrogen; metallic thin films; semiconductor thin films; silicon; silver; wide band gap semiconductors; zinc compounds; 1-D detector array; 2-D detector array; Ag; Si:H; ZnO; complex dielectric functions; expanded-beam spectroscopic ellipsometer; flexible polyimide substrate; high-speed imaging spectroscopic ellipsometry; high-speed mapping spectroscopic ellipsometry; in-line analysis; large area spatial uniformity; layer thickness; multilayer coated substrates; n-i-p structure; n-type hydrogenated amorphous silicon; optical properties; roll-to-roll thin-film photovoltaics; speed instrumentation; uniformity evaluation; Calibration; Indexes; Instruments; Oscillators; Photovoltaic cells; Substrates; Zinc oxide; Ellipsometry; photovoltaic cells; thin film;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2013.2284380
  • Filename
    6644259