A simplified modelling approach for AlGaN/GaN HEMTs using pinched cold S-parameters

Author

Jarndal, Anwar

Author_Institution

Electr. Eng. Dept., King Faisal Univ., Al-Ahsa, Saudi Arabia

fYear

2013

fDate

28-30 April 2013

Firstpage

1

Lastpage

4

Abstract

In this paper, a simplified small-signal modeling approach for GaN HEMTs has been developed. The main advantage of this approach is its dependency on only cold pinchoff S-parameter measurements to extract the parasitic elements of the device. S-parameter measurements at different bias conditions in addition to physical based analysis have been used to validate the accuracy and reliability of the developed modeling method.

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMT; bias conditions; cold pinchoff S-parameter measurements; parasitic elements; pinched cold S-parameters; simplified small-signal modeling approach; Gallium nitride; HEMTs; Integrated circuit modeling; MODFETs; Scattering parameters; Silicon carbide; Substrates; GaN HEMT; computer aided analysis; parameter extraction; semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Modeling, Simulation and Applied Optimization (ICMSAO), 2013 5th International Conference on

Conference_Location

Hammamet

Print_ISBN

978-1-4673-5812-5

Type

conf

DOI

10.1109/ICMSAO.2013.6552633

Filename

6552633