Title :
The N2 diluted Application in PECVD NF3 in-situ chamber cleaning for PFC reduction
Author :
Chen, M.H. ; Ni, C.T. ; Su, C.H. ; Chen, Y.L.
Author_Institution :
Fab3 Thin Film Eng. Dept., TSMC, Ltd., Hsinchu, Taiwan
Abstract :
For plasma enhanced chemical vapor deposition (PECVD) chamber cleaning, the in-situ plasma cleaning method was widely used with C3F8/N2O/O2 and NF3/He sources. A high efficiency NF3 in-situ cleaning recipe is demonstrated in diluting with diatomic gas, N2. With lower first ionization energy and several dissociative electron attachment (DEA) reactions, the N2 is characterized as catalyst and increase the dissociation of NF3. The cleaning uniformity problem is also solved by statistical design of experiment (DOE) approach; the well-optimized NF3/N2 cleaning recipe offers 79.6% less PFC emission than C3F8 in-situ chamber clean.
Keywords :
carbon compounds; design of experiments; helium; nitrogen compounds; plasma CVD; reduction (chemical); statistical analysis; surface cleaning; C3F8-N2O-O2; DEA reactions; N2 diluted application; NF3-He; PECVD NF3 in-situ chamber cleaning; PFC reduction; diatomic gas; dissociative electron attachment reactions; ionization energy; plasma enhanced chemical vapor deposition chamber cleaning; statistical DOE approach; statistical design of experiment approach; Cleaning; Gases; Inductors; Noise measurement; Plasmas; Radio frequency; Standards; NF3 in-situ cleaning; PFC reduction;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI
Conference_Location :
Saratoga Springs, NY
Print_ISBN :
978-1-4673-5006-8
DOI :
10.1109/ASMC.2013.6552789
