The N2 diluted Application in PECVD NF3 in-situ chamber cleaning for PFC reduction

Author

Chen, M.H. ; Ni, C.T. ; Su, C.H. ; Chen, Y.L.

Author_Institution

Fab3 Thin Film Eng. Dept., TSMC, Ltd., Hsinchu, Taiwan

fYear

2013

fDate

14-16 May 2013

Firstpage

163

Lastpage

165

Abstract

For plasma enhanced chemical vapor deposition (PECVD) chamber cleaning, the in-situ plasma cleaning method was widely used with C₃F₈/N₂O/O₂ and NF₃/He sources. A high efficiency NF₃ in-situ cleaning recipe is demonstrated in diluting with diatomic gas, N₂. With lower first ionization energy and several dissociative electron attachment (DEA) reactions, the N₂ is characterized as catalyst and increase the dissociation of NF₃. The cleaning uniformity problem is also solved by statistical design of experiment (DOE) approach; the well-optimized NF₃/N₂ cleaning recipe offers 79.6% less PFC emission than C3F8 in-situ chamber clean.

Keywords

carbon compounds; design of experiments; helium; nitrogen compounds; plasma CVD; reduction (chemical); statistical analysis; surface cleaning; C₃F₈-N₂O-O₂; DEA reactions; N₂ diluted application; NF₃-He; PECVD NF₃ in-situ chamber cleaning; PFC reduction; diatomic gas; dissociative electron attachment reactions; ionization energy; plasma enhanced chemical vapor deposition chamber cleaning; statistical DOE approach; statistical design of experiment approach; Cleaning; Gases; Inductors; Noise measurement; Plasmas; Radio frequency; Standards; NF3 in-situ cleaning; PFC reduction;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI

Conference_Location

Saratoga Springs, NY

ISSN

1078-8743

Print_ISBN

978-1-4673-5006-8

Type

conf

DOI

10.1109/ASMC.2013.6552789

Filename

6552789