MBIR for in-line doping metrology of epitaxial SiGe:B and SiC:P layers

Author

Duru, R. ; Le-Cunff, D. ; Nguyen, Thin ; Barge, D. ; Campidelli, Y. ; Laurent, N. ; Hoglund, J.

Author_Institution

STMicroelectron., Crolles, France

fYear

2013

fDate

14-16 May 2013

Firstpage

237

Lastpage

242

Abstract

This paper describes a study performed to evaluate in a manufacturing environment the Model Based Infrared Reflectometry (MBIR) technique for the monitoring of the Boron doping in epitaxial SiGe:B layers and Phosphorus doping in epitaxial SiC:P layers. MBIR correlation to comparative techniques is demonstrated on multiple wafer sets, including product wafers on bulk silicon and FD-SOI (Fully Depleted Silicon On Insulator) substrates. The results obtained demonstrate that MBIR is a suitable measurement technique for the in-line monitoring of doping for epitaxial SiGe:B and SiC:P layers.

Keywords

Ge-Si alloys; boron; infrared spectra; phosphorus; reflectometry; semiconductor doping; semiconductor epitaxial layers; silicon compounds; silicon-on-insulator; wide band gap semiconductors; FD-SOI; MBIR; Si; SiC:P; SiGe:B; boron doping; bulk silicon; epitaxial layers; fully depleted silicon on insulator substrates; in-line doping metrology; in-line monitoring; manufacturing environment; model based infrared reflectometry; multiple wafer sets; phosphorus doping; product wafers; Boron; Correlation; Epitaxial growth; Scattering; Semiconductor device modeling; Silicon; FD-SOI; MBIR; epitaxy; inline doping control;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI

Conference_Location

Saratoga Springs, NY

ISSN

1078-8743

Print_ISBN

978-1-4673-5006-8

Type

conf

DOI

10.1109/ASMC.2013.6552811

Filename

6552811