Validation of the Variable Depth Bragg Peak Method for Single-Event Latchup Testing Using Ion Beam Characterization

Author

Roche, Nicholas J.-H ; Buchner, Stephen P. ; Foster, C.C. ; King, Michael P. ; Dodds, Nathaniel A. ; Warner, Jeffrey H. ; McMorrow, Dale ; Decker, T. ; OaNeill, P.M. ; Reddell, B.D. ; Nguyen, K.V. ; Samsel, I.K. ; Hooten, N.C. ; Bennett, W.G. ; Reed, R.A.

Author_Institution

George Washington Univ., Washington, DC, USA

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

3061

Lastpage

3067

Abstract

The Variable Depth Bragg Peak method has been investigated for single event latchup testing by comparing latchup cross sections for heavy ions at low and high energies and by pulse height analysis. Results show that, unlike for an SOI device previously tested, where the charge collection depth is very small (70 nm), the comparison is not straightforward for latchup because of the large charge collection volumes involved. The variation in LET with depth for lower-energy ions greatly affects the comparison, but, if a charge collection depth of 50 μm is assumed and the LET is averaged over that distance, the comparison improves significantly.

Keywords

pulse height analysers; radiation hardening (electronics); beam characterization; charge collection depth; charge collection volumes; heavy ions; pulse height analysis; single-event latchup testing; variable depth Bragg peak method; Integrated circuits; Ion beams; Ions; Junctions; Silicon devices; Bragg peak; heavy ions; pulse height analysis; single event latchup;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2367593

Filename

6969126