Investigation of transmittance spectra in Si-based one-dimensional photonic crystals with defect

Author

Korkmaz, V. ; Cetin, Aykut ; Ucgun, E.

Author_Institution

Inf. & Commun. Technol. Authority (ICT A), Ankara, Turkey

fYear

2013

fDate

9-11 May 2013

Firstpage

558

Lastpage

562

Abstract

By using the transfer matrix method (TMM), we analyzed the properties of the transmittance spectra and photonic band of light in the 1D (one-dimensional) photonic structure with defect, which was fictionalized with two different dielectric layers. The device is designed as multilayer Si/SiO₂ structure with defect in the middle of the periodic photonic crystal system. The change of defect mode and the band gap in A₀=1550 nm central wavelength in optical communication region is investigated for the different angles of incidence of light and two different dielectric defect layers.

Keywords

dielectric thin films; elemental semiconductors; infrared spectra; multilayers; photonic band gap; photonic crystals; silicon; silicon compounds; Si-SiO₂; Si-based one-dimensional photonic crystals; TMM; band gap; defect mode; dielectric defect layers; light incidence angles; multilayer structure; optical communication region; periodic photonic crystal system; photonic band; transfer matrix method; transmittance spectra; wavelength 1550 nm; Optical reflection; Photonics; defect mode; photonic band gap; photonic crystals; transfer matrix method;

fLanguage

English

Publisher

ieee

Conference_Titel

Technological Advances in Electrical, Electronics and Computer Engineering (TAEECE), 2013 International Conference on

Conference_Location

Konya

Print_ISBN

978-1-4673-5612-1

Type

conf

DOI

10.1109/TAEECE.2013.6557335

Filename

6557335