DocumentCode
620977
Title
Effect of buffer layers in ZnO/ langasite and SnO2 /langasite SAW gas sensors
Author
Chin, Tai-Lin ; Greve, D.W. ; Ohodnicki, Paul ; Baltrus, J. ; Oppenheim, Irving J.
Author_Institution
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
1533
Lastpage
1536
Abstract
Oxygen gas sensors have previously been reported using ZnO sensing layers deposited on langasite surface acoustic wave devices. The reported gas response exhibited aging effects that may have been due to grain growth in the ZnO or reactions with the langasite substrate. In addition the kinetics of the gas response is complex. We have examined the effect of silicon oxynitride buffer layers on sensor aging and the gas response kinetics. We find that a 100 nm oxynitride layer improves the response stability and reduces the sensor response time. We also report experiments using SnO2 sensing layers where the sensor response has been correlated with the measured resistivity of the sensing layer.
Keywords
II-VI semiconductors; ageing; buffer layers; gallium compounds; gas sensors; lanthanum compounds; stability; surface acoustic wave sensors; surface acoustic wave transducers; wide band gap semiconductors; zinc compounds; SAW gas sensor; SnO2-La3Ga5SiO14; ZnO-La3Ga5SiO14; aging effect; deposition; gas response kinetics; grain growth; oxygen gas sensor; resistivity measurement; silicon oxynitride buffer layer effect; size 100 nm; stability; surface acoustic wave device; Buffer layers; Conductivity; Sensors; Substrates; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide; buffer layer; oxygen sensor; surface acoustic wave;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2012 IEEE International
Conference_Location
Dresden
ISSN
1948-5719
Print_ISBN
978-1-4673-4561-3
Type
conf
DOI
10.1109/ULTSYM.2012.0383
Filename
6562534
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