Title :
5 GHz low-power RTD-based amplifier MMIC with a high figure-of-merit of 24.5 dB/mW
Author :
Jongwon Lee ; Jooseok Lee ; Jaehong Park ; Kyounghoon Yang
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Abstract :
A low dc power RTD microwave amplifier utilizing a hybrid-coupled reflection-type topology is presented. The low-power microwave amplifier, which consists of a quadrature hybrid coupler and two RTDs, is implemented using an InP-based MMIC technology. The fabricated RTD amplifier shows low dc power consumption of 470 W with high gain of 11.5 dB at 5 GHz, resulting in high FOM of 24.5 dB/mW. The amplifier IC is the first demonstration of a low-power microwave amplifier based on the RTD device technology.
Keywords :
III-V semiconductors; MMIC power amplifiers; indium compounds; low-power electronics; FOM; InP; RTD device technology; amplifier IC; fabricated RTD amplifier; figure-of-merit; frequency 5 GHz; gain 11.5 dB; hybrid-coupled reflection-type topology; low dc power RTD microwave amplifier; low dc power consumption; low-power RTD-based amplifier MMIC technology; power 470 muW; quadrature hybrid coupler; Couplers; Gain; MMICs; Microwave FET integrated circuits; Microwave amplifiers; Microwave circuits; InP; amplifier; monolithic microwave integrated circuit; negative differential resistance; resonant tunneling diode;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562608
