Title :
Improved modeling of isolated EDMOS in advanced CMOS technologies
Author :
Litty, Antoine ; Ortolland, Sylvie ; Cristoloveanu, S. ; Ros, Helene Beckrich ; Golanski, Dominique
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
Based on systematic measurements in CMOS 40 nm bulk technology, we propose a new model for isolated Extended-Drain MOS (EDMOS) transistor. Our custom Spice macro-model includes main specific effects in high-voltage devices. In particular, the model accounts for the various parasitic bipolar components (PBCs) that are fully characterized. This model can cover various architectures, from bulk-Si to FDSOI.
Keywords :
CMOS integrated circuits; MOSFET; SPICE; integrated circuit modelling; EDMOS transistor; FDSOI; PBC; bulk technology; bulk-Si; custom Spice macro model; high voltage devices; isolated extended drain MOS transistor; parasitic bipolar components; size 40 nm; systematic measurements; CMOS integrated circuits; Integrated circuit modeling; Logic gates; Radio frequency; Semiconductor device modeling; Solid modeling; Substrates; EDMOS; Extended-drain; High-voltage; integrated MOSFET; modeling; parasitic bipolar transistor;
Conference_Titel :
IC Design & Technology (ICICDT), 2013 International Conference on
Conference_Location :
Pavia
Print_ISBN :
978-1-4673-4740-2
Electronic_ISBN :
978-1-4673-4741-9
DOI :
10.1109/ICICDT.2013.6563295
