Title :
High-density capacitors for SiP and SoC applications based on three-dimensional integrated metal-isolator-metal structures
Author :
Weinreich, W. ; Rudolph, Matthias ; Koch, Jurgen ; Paul, J. ; Seidel, K. ; Riedel, S. ; Sundqvist, Jonas ; Steidel, Katja ; Gutsch, Manuela ; Beyer, V. ; Hohle, Christoph
Author_Institution :
Bus. Unit Fraunhofer Center Nanoeletronic Technol., Fraunhofer Inst. of Photonic Microsyst., Dresden, Germany
Abstract :
This paper focuses on zirconia and TiN based metal-isolator-metal capacitors integrated in immediate vicinity to the Si substrate. A high capacitance density is aimed by significant area enhancement realized through silicon pattering. By material optimization the capacitors also withstand higher supply voltages and show excellent temperature and reliability performance independently of the 3D structure.
Keywords :
capacitors; elemental semiconductors; integrated circuit reliability; silicon; system-in-package; system-on-chip; titanium compounds; zirconium compounds; Si; SiP application; SoC application; TiN; capacitance density; high-density capacitors; material optimization; reliability performance; silicon patterning; silicon substrate; system-in-package; system-on-chip; three-dimensional integrated metal-isolator-metal structures; titanium nitride-based metal-isolator-metal capacitors; zirconia-based metal-isolator-metal capacitors; Capacitance; Capacitors; Electrodes; Silicon; Tin; 3D Si trench etching; high-density capacitor; high-k; metal-isolator-metal;
Conference_Titel :
IC Design & Technology (ICICDT), 2013 International Conference on
Conference_Location :
Pavia
Print_ISBN :
978-1-4673-4740-2
Electronic_ISBN :
978-1-4673-4741-9
DOI :
10.1109/ICICDT.2013.6563342
