DocumentCode
62141
Title
Effect of Relief Aperture on Single-Fundamental-Mode Emission of 1.3- 
m GaInNAs GaAs-Based VCSELs
Author
Sarzala, R.P. ; Czyszanowski, T. ; Nakwaski, Wlodzimierz
Author_Institution
Photonics Group, Lodz Univ. of Technol., Łódz, Poland
Volume
50
Issue
11
fYear
2014
fDate
Nov. 2014
Firstpage
874
Lastpage
881
Abstract
This paper investigates methods of suppressing higher order transverse modes in a GaInNAs/GaAs quantum-well GaAs-based vertical-cavity surface-emitting diode laser, with the aid of a 3-D self-consistent model. The inverted surface relief design, which creates the antiphase condition, proved efficient at suppressing higher order transverse modes, in spite of unfavorable thermal effects.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; quantum well lasers; surface emitting lasers; wide band gap semiconductors; 3D self-consistent model; GaInNAs-GaAs; VCSEL; antiphase condition; higher order transverse modes; inverted surface relief design; quantum-well GaAs-based vertical-cavity surface-emitting diode laser; relief aperture; single-fundamental-mode emission; thermal effects; wavelength 1.3 mum; Apertures; Distributed Bragg reflectors; Etching; Gallium arsenide; Optical losses; Stimulated emission; Vertical cavity surface emitting lasers; Semiconductor lasers; numerical simulations; photonic structures; vertical cavity surface emitting lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2014.2354744
Filename
6894581
Link To Document