Author :
Yang, Hongming ; Ye, Nan ; Phelan, R. ; O´Carroll, J. ; Kelly, B. ; Han, Weiguo ; Wang, Xiongfei ; Nudds, N. ; MacSuibhne, Naoise ; Gunning, F. ; O´Brien, Peter ; Peters, F.H. ; Corbett, Brandon
Abstract :
An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at -3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar high-speed performance at 1550nm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; leakage currents; optical fabrication; photodetectors; photodiodes; semiconductor device packaging; semiconductor quantum wells; InGaAs; bias voltage; butterfly packaged low leakage quantum well photodiode; current 120 nA; edge-coupled high-speed photodiode; high speed performance; leakage current; responsivity; strained quantum wells; voltage -3 V; wavelength 1550 nm; wavelength 2000 nm; wavelength systems;
