Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

Author

Yang, Hongming ; Ye, Nan ; Phelan, R. ; O´Carroll, J. ; Kelly, B. ; Han, Weiguo ; Wang, Xiongfei ; Nudds, N. ; MacSuibhne, Naoise ; Gunning, F. ; O´Brien, Peter ; Peters, F.H. ; Corbett, Brandon

Author_Institution

Tyndall Nat. Inst., Cork, Ireland

Volume

49

Issue

4

fYear

2013

fDate

Feb. 14 2013

Firstpage

281

Lastpage

282

Abstract

An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at -3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar high-speed performance at 1550nm.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; leakage currents; optical fabrication; photodetectors; photodiodes; semiconductor device packaging; semiconductor quantum wells; InGaAs; bias voltage; butterfly packaged low leakage quantum well photodiode; current 120 nA; edge-coupled high-speed photodiode; high speed performance; leakage current; responsivity; strained quantum wells; voltage -3 V; wavelength 1550 nm; wavelength 2000 nm; wavelength systems;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2012.4335

Filename

6464687