Localised back contact to ONO passivated c-Si solar cells using laser fired contact method

Author

Choi, P.H. ; Baek, D.H. ; Kim, H.J. ; Kim, Kwang Soon ; Park, H.S. ; Lee, J.H. ; Yi, J.S. ; Choi, B.D.

Author_Institution

Coll. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea

Volume

49

Issue

4

fYear

2013

fDate

Feb. 14 2013

Firstpage

290

Lastpage

291

Abstract

The localised back contact method for SiO₂/SiN_x/SiO₂ (ONO) back surface passivated crystalline silicon solar cells has been investigated using a 1064 nm Nd:YAG laser. From the quasi-steady-state-photoconductance measurements, feasible passivation properties of effective carrier lifetime (τ_eff), back surface recombination velocity (S_eff) and diffusion length (L_D) with the ONO passivated layer rather than with the SiN_x single layer have been confirmed. Localised point back contacts were formed varying with dot diameter and dot spacing and then the cell performance was characterised from solar simulator measurements. It was confirmed that the cell performance is closely related to the back contact area which is determined by dot diameter and spacing, and dot spacing is the more crucial factor to determine the cell performance than diameter variations.

Keywords

passivation; silicon; silicon compounds; solar cells; solid lasers; Nd:YAG laser; ONO passivated c-Si solar cells; ONO passivated layer; back surface passivated crystalline silicon solar cells; back surface recombination velocity; carrier lifetime; diffusion length; dot diameter; dot spacing; feasible passivation properties; laser fired contact method; lcalised back contact; localised back contact method; quasi-steady-state-photoconductance measurements; solar simulator measurements; wavelength 1064 nm;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2012.4465

Filename

6464693