• DocumentCode
    625472
  • Title

    Nano switching crossbar array ESD protection structures

  • Author

    Wang, Xiongfei ; Shi, Zhiyan ; Liu, Jiangchuan ; Wang, Lingfeng ; Ma, Ronghua ; Zhao, Hang ; Dong, Zhaoyang ; Zhang, Chenghui ; Wang, Aiping

  • Author_Institution
    Univ. of California, Riverside, Riverside, CA, USA
  • fYear
    2013
  • fDate
    2-4 June 2013
  • Firstpage
    389
  • Lastpage
    392
  • Abstract
    We report a new nano-switching ESD protection mechanism and dual-polarity Cu/SixOyNz/W nano crossbar array ESD structures. Experiments show full ESD protection featuring fast response of 100pS, ultra low leakage of <;2pA and ESD protection of >9A. New dispersed local ESD tunneling model and CMOS integration are reported.
  • Keywords
    CMOS integrated circuits; copper; electrostatic discharge; silicon compounds; tungsten; CMOS integration; Cu-SixOyNz-W; ESD protection structure; dispersed local ESD tunneling model; dual-polarity nanocrossbar array ESD structure; nanoswitching crossbar array; Arrays; Electrostatic discharges; Nanoscale devices; Periodic structures; Silicon; Switches; Tunneling; ESD protection; nano switching array;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    1529-2517
  • Print_ISBN
    978-1-4673-6059-3
  • Type

    conf

  • DOI
    10.1109/RFIC.2013.6569612
  • Filename
    6569612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=625472