Title :
V-band dual-conversion down-converter with low-doped N-well Schottky diode in 0.18 μm CMOS process
Author :
Yu-Chih Hsiao ; Chinchun Meng ; Hung-Ju Wei ; Ta-Wei Wang ; Guo-Wei Huang ; Chang, Mau-Chung Frank
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, a V-band dual-conversion down-converter with a silicon-based Schottky diode using low-doped N-well for DC and RF characteristics optimization is demonstrated in standard 0.18 μm CMOS technology. A triple-balanced subharmonic Schottky diode microwave mixer and a double-balanced resistive analog mixer are employed as the first conversion mixer and the second conversion mixer, respectively. As a result, the conversion gain is about -1 dB in the range of 45~64 GHz. The noise figure is about 20 dB, IP1dB is about -5 dBm and IIP3 is about 5 dBm. The total power consumption is 92.4 mW at 2.5 V supply voltage.
Keywords :
CMOS integrated circuits; Schottky diodes; microwave mixers; silicon; CMOS process; DC characteristics; RF characteristics; V-band dual-conversion down-converter; double-balanced resistive analog mixer; first conversion mixer; low-doped n-well Schottky diode; microwave mixer; power 92.4 mW; second conversion mixer; size 0.18 mum; voltage 2.5 V; CMOS integrated circuits; CMOS process; Doping; Gain; Mixers; Noise figure; Schottky diodes; Schottky diode; down-converter; dual-conversion; subharmonic mixer;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6059-3
DOI :
10.1109/RFIC.2013.6569619
