Title :
Improving the field emission property of zinc oxide by directly growing on graphene layer
Author :
Ning Zhao ; Chenyan Shi ; Ke Qu ; Chi Li ; Wei Lei ; Xiaobing Zhang
Author_Institution :
Display Res. Center, Southeast Univ., Nanjing, China
Abstract :
Zinc oxide was directly grown on the graphene layer by the hydrothermal synthesis method, and the field emission property of this hybrid structure was tested by a diode structure device. Compared with the Zinc oxide directly grown on the silicon substrates, the hybrid emitter shows better performance in the field emission properties, including low turn-on field, threshold field and high emission current. The results provide an efficient way to improve the field emission property of ZnO by using graphene layer.
Keywords :
II-VI semiconductors; field emission; graphene; wide band gap semiconductors; zinc compounds; ZnO; diode structure device; field emission property; graphene layer; high emission current; hybrid emitter; hydrothermal synthesis method; Graphene; Nanowires; Performance evaluation; Scanning electron microscopy; Silicon; Substrates; Zinc oxide; Zinc oxide; field emission; graphene;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2013 IEEE 14th International
Conference_Location :
Paris
Print_ISBN :
978-1-4673-5976-4
DOI :
10.1109/IVEC.2013.6570955