Title :
Performance degradation simulation for M-type cathode based on ion bombardment
Author :
Xiaolian Shi ; Hehong Fan ; Fangfang Song ; Xingqun Zhao ; Suiren Wan ; Xiaohan Sun
Author_Institution :
Res. Center for Electron. Device & Syst. Reliability, Southeast Univ., Nanjing, China
Abstract :
Simulation of M-type cathode performance degradation is studied based on ion bombardment with interdiffusion effect considered. Sputtered volume, sputter distribution and ion spot occurrence time can be estimated, with estimated sputtered volume close to former researches. For M-type Re-coated cathode with 300nm-thick film, ion spots were estimated to appear after 2.06×105 h´s working.
Keywords :
cathodes; chemical interdiffusion; sputter deposition; M-type recoated cathode; interdiffusion effect; ion bombardment; ion spot occurrence time estimation; performance degradation simulation; size 300 nm; sputter distribution estimation; sputtered volume estimation; thick film; Atomic measurements; Cathodes; Coatings; Degradation; Films; Solid modeling; Trajectory; M-type cathode; degradation model; ion bombardment; ion spot; sputter;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2013 IEEE 14th International
Conference_Location :
Paris
Print_ISBN :
978-1-4673-5976-4
DOI :
10.1109/IVEC.2013.6571103
