DocumentCode :
626478
Title :
Ultra-low-power high sensitivity spike detectors based on modified nonlinear energy operator
Author :
Yang-Guo Li ; Qingyun Ma ; Haider, Mohammad Rafiqul ; Massoud, Yehia
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Alabama at Birmingham, Birmingham, AL, USA
fYear :
2013
fDate :
19-23 May 2013
Firstpage :
137
Lastpage :
140
Abstract :
Spike detectors are important data-compression components for state-of-the-art implantable neural recording microsystems. This paper proposes two improved spike detection algorithms, frequency-enhanced nonlinear energy operator (fNEO) and energy-of-derivative (ED), to solve the sensitivity reduction of a conventional nonlinear energy operator (NEO) in the presence of baseline interference. The proposed methods are implemented in two analog spike detectors with a standard 0.13-μm CMOS process. To achieve an ultra-low-power design, weak-inversion MOSFET based multipliers, adders and derivative circuits are developed to work with a 0.5 V power supply. The power dissipations of the proposed fNEO spike detector and the ED spike detector are 258.7 nW and 129.4 nW, respectively. Quantitative investigations based on the standard deviation and peak-to-clutter ratio of the detected spikes indicate that the proposed spike detector schemes hold higher sensitivity than the conventional NEO based spike detector.
Keywords :
CMOS integrated circuits; MOSFET; adders; biomedical electronics; biomedical transducers; data compression; electric sensing devices; integrated circuit design; interference; low-power electronics; microsensors; multiplying circuits; prosthetics; ED; adder; analog spike detector; baseline interference presence; data-compression component; derivative circuit; energy-of-derivative; fNEO; frequency-enhanced nonlinear energy operator; implantable neural recording microsystem; multiplier; peak-to-clutter ratio; power 129.4 nW; power 258.7 nW; size 0.13 mum; standard CMOS process; ultralow-power high sensitivity spike detector algorithm; voltage 0.5 V; weak-inversion MOSFET; Detection algorithms; Detectors; Interference; Inverters; Power dissipation; Sensitivity; Signal to noise ratio;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
ISSN :
0271-4302
Print_ISBN :
978-1-4673-5760-9
Type :
conf
DOI :
10.1109/ISCAS.2013.6571801
Filename :
6571801
Link To Document :
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