DocumentCode
626495
Title
PSpice switch-based versatile memristor model
Author
Ascoli, A. ; Tetzlaff, Ronald ; Corinto, Fernando ; Gilli, Manfred
Author_Institution
Fac. of Electr. & Comput. Eng., Tech. Univ. Dresden, Dresden, Germany
fYear
2013
fDate
19-23 May 2013
Firstpage
205
Lastpage
208
Abstract
This paper proposes a simple PSpice implementation of the boundary condition model for memristor nano-structures. The boundary condition model is equivalent to the linear drift model except for the introduction of adaptable boundary conditions, which impose an activation threshold of the state dynamics at the boundaries, i.e. once the state gets clipped at one of the boundaries, it may not be released from it unless the input reverses its sign and gets larger than a certain activation threshold in magnitude. Thanks to the adaptability of the boundary behavior, the boundary condition model is able to describe a variety of physical nano-scale systems, where mem-ristor dynamics arise from distinct physical mechanisms. The proposed PSpice emulator may be used for the investigation of potential applications of memristive systems in integrated circuit design, especially for the development of non-volatile memories and neuromorphic platforms. The accuracy of the PSpice circuit model is validated through comparison with experimental results relative to the Hewlett-Packard memristor.
Keywords
SPICE; memristors; nanoelectronics; random-access storage; semiconductor device models; Hewlett-Packard memristor; PSPICE emulator; PSPICE switch-based versatile memristor model; activation threshold; boundary condition model; distinct physical mechanisms; integrated circuit; linear drift model; memristor nanostructures; neuromorphic platforms; nonvolatile memories development; physical nanoscale systems; Adaptation models; Boundary conditions; Computational modeling; Integrated circuit modeling; Mathematical model; Memristors; SPICE;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location
Beijing
ISSN
0271-4302
Print_ISBN
978-1-4673-5760-9
Type
conf
DOI
10.1109/ISCAS.2013.6571818
Filename
6571818
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