Effect of MOSFET parasitic capacitances on EER transmitter with class-E amplifier

Author

Xiuqin Wei ; Nagashima, Tomoharu ; Sekiya, Hiroo ; Suetsugu, Tadashi

Author_Institution

Dept. of Electron. Eng. & Comput. Sci., Fukuoka Univ., Fukuoka, Japan

fYear

2013

fDate

19-23 May 2013

Firstpage

913

Lastpage

916

Abstract

This paper presents analytical expressions of the MOSFET-parasitic-capacitance effects on the output envelope of the EER transmitter, taking into account the MOSFET linear gate-to-drain and nonlinear drain-to-source parasitic capacitances in the class-E amplifier. The analysis is useful to predict the behavior of the EER transmitter using the class-E amplifier. It is shown that the envelope of the output voltage is not in proportion to the dc-supply voltage due to the MOSFET-parasitic-capacitance effects. Additionally, the driving voltage waveform affects the output-voltage amplitude and phase shift between the driving voltage and the output voltage.

Keywords

MOSFET circuits; power amplifiers; radio transmitters; EER transmitter; class-E amplifier; dc-supply voltage; driving voltage waveform; linear gate-to-drain parasitic capacitances; nonlinear drain-to-source parasitic capacitances; output-voltage amplitude; phase shift; Capacitance; Envelope detectors; Power amplifiers; Silicon compounds; Switches; Zero voltage switching; Class-E amplifier; EER transmitter; drain-to-source nonlinear capacitance; gate-to-drain linear capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2013 IEEE International Symposium on

Conference_Location

Beijing

ISSN

0271-4302

Print_ISBN

978-1-4673-5760-9

Type

conf

DOI

10.1109/ISCAS.2013.6571996

Filename

6571996